DatasheetsPDF.com

GT30J322

Part Number	GT30J322
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Mar 23, 2005
Detailed Description	GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESON...
Datasheet	GT30J322 PDF File

Overview

GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.
25μs (Typ.
) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.
1V (Typ.
) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Emitter−Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms VCES VGES IC ICP IF IFP PC Tj Tstg 600 ±20 30 100 30 60 75 150 −55 to 15...

Similar Datasheet

GT30J301 N-Channel IGBT - Toshiba Semiconductor
GT30J311 N-Channel IGBT - Toshiba Semiconductor
GT30J322 Silicon N-Channel IGBT - Toshiba Semiconductor
GT30J324 Silicon N-Channel IGBT - Toshiba Semiconductor
GT30J341 Silicon N-Channel IGBT - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)