Document
GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
l The 3rd Generation
l Enhancement−Mode
l High Speed
: tf = 0.30µs (Max.)
l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
l FRD included between Emitter and Collector
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
DC Collector Current
1ms
Emitter−Collector Forward
DC
Current
1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCES VGES
IC ICP IF IFM
PC
Tj Tstg
RATING
600 ±20 30 60 30 60
155
150 −55~150
EQUIVALENT CIRCUIT
UNIT
V V A A A A
W
°C °C
JEDEC JEITA TOSHIBA
Weight: 4.6g
― ― 2−16C1C
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GT30J301
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
Gate Leakage Current
Collector Cut−Off Current
Gate−Emitter Cut−Off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−On Time Fall Time
Turn−Off Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
IGES
VGE = ±20V, VCE = 0
―
ICES
VCE = 600V, VGE = 0
―
VGE (OFF) IC = 3mA, VCE = 5V
5.0
VCE (sat) IC = 30A, VGE = 15V
―
Cies
VCE = 20V, VGE = 0, f = 1MHz
―
tr
Inductive Load
―
ton
VCC = 300V, IC = 30A
―
tf
VGG = ±15V, RG = 43Ω
―
(Note)
toff
―
VF
IF = 30A, VGE = 0
―
trr
IF = 30A, di / dt = −100A / µs
―
Rth (j−c)
―
―
Rth (j−c)
―
―
Note : Switching time measurement circuit and input / output waveforms
TYP.
― ― ― 2.1 2200 0.12 0.40 0.15 0.70 ― ― ― ―
MAX UNIT
±500 1.0 8.0 2.7 ― ― ― 0.30 ― 2.0 200 0.81 2.0
nA mA V V pF
µs
V ns °C / W °C / W
Switching loss measurement waveforms
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