DatasheetsPDF.com

GT25Q301

Part Number	GT25Q301
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Mar 23, 2005
Detailed Description	GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Mo...
Datasheet	GT25Q301 PDF File

Overview

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.
32 µs (max) Low saturation voltage: VCE (sat) = 2.
7 V (max) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±20 25 50 25 50 200 150 −55 to 150 Unit V V A Diode forward current A JEDEC JEITA ― ― 2-21F2C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range W °C °C TO...

Similar Datasheet

GT25Q301 Silicon N-Channel IGBT - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)