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GT25G101 Dataheets PDF



Part Number GT25G101
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel IGBT
Datasheet GT25G101 DatasheetGT25G101 Datasheet (PDF)

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC 1ms Ta=25°C Tc=25°C SYMBOL VCES VGES IC ICP PC PC Tj Tstg RATING 400 ±25 25 17.

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GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC 1ms Ta=25°C Tc=25°C SYMBOL VCES VGES IC ICP PC PC Tj Tstg RATING 400 ±25 25 170 1.3 75 150 −55~150 UNIT V V A W °C °C JEDEC JEITA TOSHIBA Weight : 1.5g ― ― 2−10S1C ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−off Current Gate−Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−on Time Fall Time Turn−off Time Thermal Resistance SYMBOL IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j−c) ― TEST CONDITION VGE=±25V, VCE=0 VCE=400V, VGE=0 IC=1mA, VCE=5V IC=170A, VGE=20V (Pulsed) VCE=10V, VGE=0, f=1MHz MIN. ― ― 4 ― ― ― ― ― ― ― TYP. ― ― 5 5 2000 0.1 0.15 4.0 4.5 ― MAX. ±100 10 7 8 ― 0.5 0.5 6.0 7.0 1.66 °C / W µs UNIT nA µA V V pF 1 2002-02-06 GT25G101 2 2002-02-06 GT25G101 3 2002-02-06 GT25G101 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-02-06 .


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