GT15Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
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Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current ...
