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GT15J331 Dataheets PDF



Part Number GT15J331
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel IGBT
Datasheet GT15J331 DatasheetGT15J331 Datasheet (PDF)

GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ.) Low Saturation Voltage: VCE (sat) = 1.75 V (typ.) FRD included between Emitter and collector. Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (.

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