GT15J321

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit: mm The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector. Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 15 30 15 30 30 150 −55~150 Unit V V A JEDEC A W °C °C ― ― 2-10R1C JEITA TOSHIBA Weight: 1.7 g Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT15J321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) IF = 15 A, VGE = 0 IF = 15 A, di/dt = −100 A/µs   Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 1.5 mA, VCE = 5 V IC = 15 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 15 A VGG = 15 V, RG = 43 Ω (Note ...