GT10Q101

GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 ±20 10 20 140 150 −55~150 Unit V V A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.6 g (typ.) 1 2002-01-23 GT10Q101 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c)  Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note1) Min   4.0   Typ.    2.1 600 0.07 0.30 0.16 0.50  Max ±500 1.0 7.0 2.7  Unit nA mA V V pF        0.32 µs  0.89 °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT10Q301 −VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% Note2:...