GT10Q101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching A...
GT10Q101
Preliminary
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 ±20 10 20 140 150 −55~150 Unit V V A
W °C °C
JEDEC JEITA TOSHIBA
― ― 2-16C1C
Weight: 4.6 g (typ.)
1
2002-01-23
GT10Q101
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note1) Min 4.0 Typ. 2.1 600 0.07 0.30 0.16 0.50 Max ±500 1.0 7.0 2.7 Unit nA mA V V pF
0.32 µs
0.89 °C/W
Note1: Switching time measurement circuit and input/output waveforms
VGE GT10Q301 −VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0
90% 10%
Note2:...