DatasheetsPDF.com

C1906 Dataheets PDF



Part Number C1906
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SC1906
Datasheet C1906 DatasheetC1906 Datasheet (PDF)

2SC1906 Silicon NPN Epitaxial Planar Application • VHF amplifier • Mixer, Local oscillator Outline TO-92 (2) 3 2 1 1. Emitter 2. Collector 3. Base 2SC1906 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °C Ele.

  C1906   C1906



Document
2SC1906 Silicon NPN Epitaxial Planar Application • VHF amplifier • Mixer, Local oscillator Outline TO-92 (2) 3 2 1 1. Emitter 2. Collector 3. Base 2SC1906 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown voltage V(BR)CBO 30 Collector to emitter breakdown V(BR)CEO voltage 19 Emitter to base breakdown voltage V(BR)EBO 2 Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance I CBO hFE fT Cob — 40 600 — Collector to emitter saturation VCE(sat) voltage — Base time constant rbb’ • CC — Power gain PG — — Typ Max Unit Test conditions — —V IC = 10 µA, IE = 0 — —V IC = 3 mA, RBE = ∞ — —V IE = 10 µA, IC = 0 — — 1000 1.0 0.2 0.5 — — 2.0 1.0 µA MHz pF V VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA 10 25 ps VCB = 10 V, IC = 10 mA, f = 31.8 MHz 33 — dB VCE = 10 V, f = 45 MHz IC = 5 mA 18 — dB VCE = 10 V, f = 200 MHz IC = 5 mA 2 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) Typical Transfer Characteristics 20 16 VCE = 10 V 12 8 4 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE Collector Current IC (mA) 2SC1906 Typical Output Characteristics 20 180 160 16 140 120 12 100 80 8 60 4 40 IB = 20 µA 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 120 100 VCE = 10 V 80 60 40 20 0 0.1 0.2 0.5 1.0 2 5 10 20 50 100 Collector Current IC (mA) = 300 mW PC Collector Current IC (mA) 3 2SC1906 Collector Current IC (mA) 700 800 900 Gain Bandwidth Product Curve 20 16 12 f T= 1,000 MHz 8 4 600 500 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Base time Constant rbb'•CC (ps) Base Time Constant vs. Collector Currnt 200 100 VCB = 10 V f = 31.8 MHz 50 20 10 5 2 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Gain Bandwidth Product fT (MHz) Input Suceptance bie (mS) 1,200 1,000 800 Gain Bandwidth Product vs. Collector Current VCE = 10 V f = 100 MHz 600 400 200 0 0.1 0.3 1.0 3 10 30 Collector Current IC (mA) 100 Input Admittance vs. Frequency 12 2 mA 4 mA 8 mA 12 mA IC = 1 mA 250 10 200 8 6 100 4 50 yie = gie+jbie 2 f = 25 MHz VCE = 9 V 0 2 4 6 8 10 12 Input Conductance gie (mS) 4 Output Suceptance boe (mS) Output Admittance vs. Frequency 6 5 IC = 1 mA 2 4 4 3 8 12 250 200 2 100 1 50 yoe = goe+jboe VCE = 9 V f = 25 MHz 0 0.2 0.4 0.6 0.8 1.0 1.2 Output Conductance goe (mS) Forward Transfer Admittance vs. Frequency 20 IC = 1 mA yfe =.


LC3664RMSL-15 C1906 C2670


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)