Document
2SC1906
Silicon NPN Epitaxial Planar
Application
• VHF amplifier • Mixer, Local oscillator
Outline
TO-92 (2)
3 2 1
1. Emitter 2. Collector 3. Base
2SC1906
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC IE PC Tj Tstg
Ratings 30 19 2 50 –50 300 150 –55 to +150
Unit V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown voltage
V(BR)CBO
30
Collector to emitter breakdown V(BR)CEO voltage
19
Emitter to base breakdown voltage
V(BR)EBO
2
Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance
I CBO hFE fT Cob
— 40 600 —
Collector to emitter saturation VCE(sat) voltage
—
Base time constant
rbb’ • CC —
Power gain
PG —
—
Typ Max Unit Test conditions
— —V
IC = 10 µA, IE = 0
— —V
IC = 3 mA, RBE = ∞
— —V
IE = 10 µA, IC = 0
— — 1000 1.0 0.2
0.5 — — 2.0 1.0
µA
MHz pF V
VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA
10 25 ps VCB = 10 V, IC = 10 mA, f = 31.8 MHz
33 — dB VCE = 10 V, f = 45 MHz IC = 5 mA
18 — dB VCE = 10 V, f = 200 MHz IC = 5 mA
2
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve 300
200
100
0 50 100 150 Ambient Temperature Ta (°C)
Typical Transfer Characteristics 20 16 VCE = 10 V 12
8 4
0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio hFE
Collector Current IC (mA)
2SC1906
Typical Output Characteristics 20
180 160
16 140 120
12 100 80
8 60
4 40 IB = 20 µA
0 4 8 12 16 20 Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
120
100 VCE = 10 V
80
60
40
20
0 0.1 0.2 0.5 1.0 2 5 10 20 50 100
Collector Current IC (mA)
= 300 mW PC
Collector Current IC (mA)
3
2SC1906
Collector Current IC (mA) 700 800
900
Gain Bandwidth Product Curve 20
16 12
f T= 1,000 MHz
8
4 600 500
0 4 8 12 16 20 Collector to Emitter Voltage VCE (V)
Base time Constant rbb'•CC (ps)
Base Time Constant vs. Collector Currnt
200
100
VCB = 10 V f = 31.8 MHz
50
20 10
5
2 0.1 0.2
0.5 1.0 2
5
Collector Current IC (mA)
10
Gain Bandwidth Product fT (MHz)
Input Suceptance bie (mS)
1,200 1,000
800
Gain Bandwidth Product vs. Collector Current
VCE = 10 V f = 100 MHz
600
400
200
0 0.1 0.3 1.0 3
10 30
Collector Current IC (mA)
100
Input Admittance vs. Frequency
12 2 mA 4 mA 8 mA 12 mA
IC = 1 mA
250
10 200
8
6 100
4 50
yie = gie+jbie
2
f = 25 MHz
VCE = 9 V
0 2 4 6 8 10 12 Input Conductance gie (mS)
4
Output Suceptance boe (mS)
Output Admittance vs. Frequency 6
5 IC = 1 mA 2
4
4
3
8
12 250
200
2 100
1 50
yoe = goe+jboe VCE = 9 V
f = 25 MHz
0 0.2 0.4 0.6 0.8 1.0 1.2 Output Conductance goe (mS)
Forward Transfer Admittance vs.
Frequency
20
IC = 1 mA
yfe =.