HPND-4005

Beam Lead PIN Diode Technical Data HPND-4005 Features High Breakdown Voltage 120 V Typical Low Capacitance 0.017 pF Typical Low Resistance 4.7 Ω Typical Rugged Construction 4 Grams Minimum Lead Pull Nitride Passivated Description The HPND-4005 planar beam lead PIN diode is constructed to offer exceptional lead strength while achieving excellent electrical performance at high frequencies. High beam strength offers users superior assembly yield, while extremely low capacitance allows high isolation to be realized. Nitride passivation and polyimide coating provide reliable device protection. Applications The HPND-4005 beam lead PIN diode is designed for use in stripline or microstrip circuits. Applications include switching, attenuating, phase shifting, limiting, and modulating at microwave frequencies. The CATHODE 110 (4.3) 80 (3.1) GOLD LEADS S1O2/Si3N4 PASSIVATION 130 (5.1) 110 (4.3) 130 (5.1) 110 (4.3) .4 (10) .3 (7) 760 (29.9) 640 (25.2) 220 (8.7) 180 (7.1) GLASS SILICON 320 (12.6) 220 (8.7) 280 (11.0) 180 (7.1) DIMENSIONS IN µm (1/1000 inch) Outline 21 60 (2.4) 30 (1.2) 25 MIN (1.0) Maximum Ratings Operating Temperature ................................................ -65°C to +175°C Storage Temperature .................................................... -65°C to +200°C Power Dissipation at TCASE = 25°C ........................................... 250 mW (Derate linearly to zero at 175°C.) Minimum Lead Strength ............................... 4 g...