Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA1625 TRANSISTOR (PNP)
FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage
TO – 92
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -400 -400
-7 -500 750 166 150 -55~+150
Unit V V V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.1mA,IE=0
-400
V
V(BR)CEO IC=-1mA,IB=0
-400
V
V(BR)EBO IE=-0.1mA,IC=0
-7
V
ICBO VCB=-400V,IE=0
-10 μA
IEBO VEB=-5V,IC=0
-10 μA
hFE VCE=-5V, IC=-50mA
40
200
VCE(sat)
IC=-100mA,IB=-10mA
-0.5 V
VBE (sat) IC=-100mA,IB=-10mA
-1.2 V
Cob VCB=-10V,IE=0, f=1MHz
20 pF
fT VCE=-10V,IC=-10mA
20
MHz
CLASSIFICATION OF hFE
RANK RANGE
M 40-80
L 60-120
K 100-200
A,Dec,2010
.