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2SA1625 Dataheets PDF



Part Number 2SA1625
Manufacturers JCST
Logo JCST
Description PNP Transistor
Datasheet 2SA1625 Datasheet2SA1625 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1625 TRANSISTOR (PNP) FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient .

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1625 TRANSISTOR (PNP) FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -400 -400 -7 -500 750 166 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol Test conditions Min Typ Max Unit V(BR)CBO IC= -0.1mA,IE=0 -400 V V(BR)CEO IC=-1mA,IB=0 -400 V V(BR)EBO IE=-0.1mA,IC=0 -7 V ICBO VCB=-400V,IE=0 -10 μA IEBO VEB=-5V,IC=0 -10 μA hFE VCE=-5V, IC=-50mA 40 200 VCE(sat) IC=-100mA,IB=-10mA -0.5 V VBE (sat) IC=-100mA,IB=-10mA -1.2 V Cob VCB=-10V,IE=0, f=1MHz 20 pF fT VCE=-10V,IC=-10mA 20 MHz CLASSIFICATION OF hFE RANK RANGE M 40-80 L 60-120 K 100-200 A,Dec,2010 .


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