Document
AMMC-6232 18 to 32 GHz GaAs High Linearity Low Noise Amplifier
Data Sheet
Chip Size: 800 μm x 2000μm (31.5 x 78.74 mils) Chip Size Tolerance: ±10 μm (±0.4 mils) Chip Thickness: 100 ± 10 μm (4 ±0.4 mils) Pad Dimensions: 100 x 100 μm (4 x 4 mils)
Description
Avago Technologies AMMC-6232 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 18 GHz to 32GHz. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter or LO driver. The MMIC has 4 gain stages and requires a 4V, 135mA power supply for optimal performance. The two gate bias voltages can be combined for ease of use or separated for more control flexibility. DCblock capacitors are integrated at the input and output stages. Since this MMIC covers several bands, it can reduce part inventory and increase volume purchase options The MMIC is fabricated using PHEMT technology to provide exceptional low noise, gain and power performance. The backside of the chip is both RF and DC ground which helps simplify the assembly process and reduce assembly related performance variations and cost.
Attention:Observe precautions for handling electrostaticsensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control
Features
• 800μm x 2000μm Die Size • Unconditionally Stable
Specifications (Vdd = 4.0V, Idd = 135mA)
• RF Frequencies: 18 - 32 GHz • High Output IP3: 29dBm • High Small-Signal Gain: 27dB • Typical Noise Figure: 2.8dB • Input, Output Match: -10dB
Applications
• Microwave Radio systems • Satellite VSAT, DBS Up/Down Link • LMDS & Pt-Pt mmW Long Haul • Broadband Wireless Access
(including 802.16 and 802.20 WiMax) • WLL and MMDS loops
Note: 1. This MMIC uses depletion mode pHEMT devices.
Absolute Maximum Ratings [1]
Parameters / Conditions Drain to Ground Voltage Gate-Drain Voltage Drain Current Gate Bias Voltage Gate Bias Current RF CW Input Power Max Max channel temperature Storage temperature Maximum Assembly Temp
Symbol Vdd Vgd Idd Vg Ig Pin Tch stg Tmax
Unit
Max
V
5.5
V
-8
mA
200
V
+0.8
mA
1
dBm
15
C
+150
C
-65 +150
C
260 for 20s
Notes
1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd Vg, Ig and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties [2]
Parameter and Test Condition
Symbol
Unit
Min
Typ
Max
Drain Supply Current (Vd=4.0 V)
Idd
mA
135
150
Drain Supply Voltage
Vd
V
3
4
5
Gate Bias Current
Ig
mA
0.1
Gate Bias Voltage
Vg
V
-1.3
-0.95
-0.55
Thermal Resistance(3)
θjc
°C/W
35.1
2. Ambient operational temperature TA=25°C unless noted 3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) =
25°C calculated from measured data.
AMMC-6232 RF Specifications [4]
TA= 25°C, Vdd = 4.0 V, Idd = 135mA, Zo=50 Ω
Parameters and Test Conditions
Frequency
Spec
Symbol
Unit
(GHz)
Min
Typ
Max
Small signal gain (4)
AGain
dB
20
23
32
26
23
26.7
31
23
24.6
Noise Figure into 50W (4)
NF
dB
20
3.2
4.5
26
3.3
4.5
31
4
4.5
Output Power at 1dB Gain Compression (4) P1dB
dBm
20, 26, 31
15
20
Output Third Order Intercept Point (4)
OIP3
dBm
20
26
28
26
26
28
31
26
27
Isolation
S12
dB
20, 26, 31
-50
Input Return Loss
S11
dB
20, 26, 31
-10
Output Return Loss
S22
dB
20, 26, 31
-10
4. All tested parameters guaranteed with measurement accuracy ±5dBm for OPI3 and ± 2dB for gain, NF and P1dB.
AMMC-6232 Typical Performance[1]
(TA = 25°C, Vdd=4V, Idd=135mA, Zin = Zout = 50 Ω, on-wafer unless noted)
40
5
NoiseFigure (dB)
S21 (dB)
30
4
3 20
2
10
1
0
15
20
25
30
35
Frequency (GHz)
0 18 20 22 24 26 28 30 32
Frequency (GHz)
Figure 1. Small-signal Gain
Figure 2. Noise Figure
0
20
OP1dB (dBm)
S11 (dB)
-10
15
-20
10
-30
15
20
25
30
35
Frequency (GHz)
5 18 20 22 24 26 28 30 32 Frequency (GHz)
Figure 3. Input Return Loss
Figure 4. Output P-1dB
0
-5
S22 (dB)
-10
-15
-20
15
20
25
30
35
Frequency (GHz)
Figure 5. Output Return Loss
Note 1. Noise Figure is measured with a 3-dB pad at the input .
OIP3 (dBm)
40
30
20
10
0 18 20 22 24 26 28 30 32 Frequency (GHz)
Figure 6. Output IP3
AMMC-6232 Typical Performance (Cont)
(TA = 25°C, Vdd=4V, Idd=135mA, Zin = Zout = 50 Ω, on-wafer unless noted)
-20
-30
S12 (dB)
-40
-50
-60
-70
15
20
25
30
35
Frequency (GHz)
Figure 7. Isolation
200
170
Idd (mA)
140
110
80
50
3
3.5
4
4.5
5
Vdd (V)
Figure 8. Idd Over Vdd (same Vg)
40
30
S21 (dB)
20 4V
10
5V
3V
0
15
20
25
30
35
Frequency (GHz)
Figure 9. Small-signal Gain Over Vdd
NoiseFigure (.