Document
AMMC-6222 7 to 21 GHz GaAs High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies AMMC-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 7 GHz to 21GHz. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter or LO driver. The MMIC has 3 gain stages and requires a 4V, 120mA power supply for optimal performance. It has a selectable pin to switch between low and high current, corresponding with low and high output power and linearity. DC-block capacitors are integrated at the input and output stages. Since this MMIC covers several bands, it can reduce part inventory and increase volume purchase options The MMIC is fabricated using PHEMT technology to provide exceptional low noise, gain and power performance. The backside of the chip is both RF and DC ground which helps simplify the assembly process and reduce assembly related performance variations and cost.
Features
• 2000μm x 800μm Die Size • Single Positive Bias Supply • Selectable Output Power / Linearity • No Negative Gate Bias
Specifications (Vdd = 4.0V, Idd = 120mA)
• RF Frequencies: 7 - 21 GHz • High Output IP3: 29dBm • High Small-Signal Gain: 25dB • Typical Noise Figure: 2.4dB • Input, Output Match: -10dB
Applications
• Microwave Radio systems • Satellite VSAT, DBS Up/Down Link • LMDS & Pt-Pt mmW Long Haul • Broadband Wireless Access (including 802.16 and
802.20 WiMax) • WLL and MMDS loops • Commercial grade military Note: 1. This MMIC uses depletion mode pHEMT devices.
Chip Size: 800 μm x 2000μm (31.5 x 78.74 mils) Chip Size Tolerance: ±10 μm (±0.4 mils) Chip Thickness: 100 ± 10 μm (4 ±0.4 mils) Pad Dimensions: 100 x 100 μm (4 x 4 mils)
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (60V) ESD Human Body Model (150V) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control
Absolute Maximum Ratings (1)
Parameters/Condition Drain to Ground Voltage Gate-Drain Voltage Drain Current RF CW Input Power Max Max channel temperature Storage temperature Maximum Assembly Temp
Symbol Vdd Vgd Idd Pin Tch Tstg Tmax
Unit V V mA dBm C C C
Max 5.5 -10 170 10 +150 -65 +150 260 for 20s
(1) Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties (2)
Parameter and Test Condition Drain Supply Current under any RF power drive and temp. (Vd=4.0 V) Drain Supply Voltage Thermal Resistance(3)
Symbol Unit
Min
Idd mA 80
Vd V 3
θjc °C/W
Typ Max 120 160 45 31.4
(2) Ambient operational temperature TA=25°C unless noted (3) Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 25°C calculated from measured data.
AMMC-6222 RF Specifications
TA= 25°C, Vdd = 4.0 V, Idd=120mA, Zo=50 W
Parameters and Test Conditions Drain Current Small-Signal Gain[4] Noise Figure into 50W [4]
Output Power at 1dB Gain Compression Output Third Order Intercept Point Isolation Input Return Loss Output Return Loss
Symbol Idd Gain NF
P-1dB OIP3 Iso RLin RLout
Freq
Unit (GHz) mA dB 9, 12, 17 dB 9
12 17 dBm dBm 9, 12, 17 dB dB dB
High Output Power Configuration Min Typical
120 20 26
2.7 2.5 2.7 13 15.5 26 28 -50 -10 -10
Max
2.8 2.8 2.8
Low Output Power Configuration Min Typical Max
95 24 2.4 2.4 2.4 15 27 -50 -10 -10
(4) All tested parameters guaranteed with measurement accuracy ± 2dB for gain and P1dB, ±0.8dB for NF and ±5dBm for OPI3 in the high output power configuration.
Typical distribution of Gain, Noise Figure and P1dB based on 1500 parts AMMC-6222 Typical Performance for High Current, High Output Power Configuration [1]
(TA = 25°C, Vdd=4V, Idd=120mA, Zin = Zout = 50 W, on-wafer unless noted)
S21 (dB)
30
25
20
15
10
5 5 10 15 20 Frequency (GHz)
Figure 1a. Small-signal Gain
25
Noise Figure (dB)
5 4 3
2 1 0
6 8 10 12 14 16 18 20 22 Frequency (GHz)
Figure 2a. Noise Figure
S11 (dB)
0
-5
-10
-15
-20 5 10 15 20 Frequency (GHz)
Figure 3a. Input Return Loss
25
OP1dB (dBm)
20
15 10
5 0
6 8 10 12 14 16 18 20 22 Frequency (GHz)
Figure 4a. Output P-1dB
0 40
-5 30
OIP3 (dBm)
S22 (dB)
-10 20
-15
10 -20
-25 5
10 15 20 Frequency (GHz)
25
0 6 8 10 12 14 16 18 20 22
Frequency (GHz)
Figure 5a. Output Return Loss
Figure 6a. Output IP3
Note: [1] Noise Figure is measured with a 3-dB pad at input
AMMC-6222 Typical Performance for High Current, High Output Power Configuration (Cont)
(TA = 25°C, Vdd=4V, Idd=120mA, Zin = Zout = 50 W, on-wafer unless noted)
-20
-30
S12 (dB)
-40
-50
-60 5
Figure 7a. Isolation
10 15 20 Frequency (GHz)
25
S21 (dB)
30
25
20
15 4V 10 5V
3V 5
5 10 15 20 Frequency (GHz)
Figure 9a. Small-signal Gain Over Vdd
0 4V
-.