2SA1650

DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (UNIT: mm) FEATURES Mold package that does not require an insulating board or insulation bushing Fast switching speed Low collector-to-emitter saturation voltage: VCE(sat) ≤ −0.3 V (MAX.) @IC = −3 A QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Electrode Connection <1> Base <2> Collector <3> Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ID(DC) IC(pulse) IB(DC) PT PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% Tc = 25°C Ta = 25°C Ratings −150 −100 −7.0 −5.0 −10 −2.5 25 2.0 150 −55 to +150 Unit V V V A A A W W °C °C The information in this document is subject to change without notice. Before us...