SSF1090

SSF1090 100V N-Channel MOSFET Features  Advanced trench process technology  Ideal for convertors and power controls  High density cell design for ultra low Rdson  Fully characterized Avalanche voltage and current  Avalanche Energy 100% tested ID =15A BV=100V Rdson=0.06Ω (Typ.) Description The SSF1090 utilizes the latest processing techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications. Application n Power switching application TO-220 Absolute Maximum Ratings Symbol Parameter ID@Tc=25 °C Continuous Drain Current,VGS@10V ID@Tc=100°C Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery Voltage TJ TSTG Operating Junction and Storage Temperature Range Max. 15 10 60 42 0.4 ±20 240 TBD 28 –55 to +175 Units A W W/°C V mJ mJ v/ns °C Thermal Resistance Symbol Parameter Min. Typ. RθJC Junction-to-Case — 3.6 RθJA Junction-to-Ambient —— *When mounted on the minimum pad size recommended（PCB Mount） Max. — 69 Units °C /W Electrical Characteristics @TJ=25 °C (unless otherwise specified) Sym. Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 100 — — V RDS(on) ...