Document
-100mA / -50V Digital transistors (with built-in resistor)
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
Applications Inverter, Interface, Driver
Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
DTA144TM
1.2 0.32
(3)
0.2 0.8 0.2 1.2
ROHM : VMT3
0.22
(1)(2)
0.4 0.4 0.8
0.13 0.5
DTA144TUA
Abbreviated symbol : 96
2.0 0.3
(3)
0.9 0.2 0.7
DTA144TE
1.6 0.3
(3)
0.7 0.55
0.8 1.6 0.1Min.
(1) Base (2) Emitter (3) Collector
ROHM : EMT3
DTA144TKA
(2) (1) 0.2 0.2
0.5 0.5 1.0
0.15
Abbreviated symbol : 96
2.9 1.1
0.4 0.8
(3)
(1) Emitter (2) Base (3) Collector
1.6 2.8 0.3Min.
1.25 2.1 0.1Min.
ROHM : UMT3 EIAJ : SC-70
(2) (1)
0.65 0.65 1.3
(1) Emitter 0.15 (2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 96
ROHM : SMT3 EIAJ : SC-59
(2) (1)
0.95 0.95 1.9
(1) Emitter 0.15 (2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 96
Inner circuit
B R1
B : Base C : Collector E : Emitter
R1=47kΩ
C E
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1/2
2009.06 - Rev.C
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
Packaging specifications
Package Packaging type Code
VMT3 Taping
T2L
EMT3 Taping
TL
UMT3 Taping
T106
SMT3 Taping
T146
Part No.
Basic ordering unit (pieces)
DTA144TM
DTA144TE
DTA144TUA
DTA144TKA
8000
− − −
3000 −
− −
3000 − −
−
3000
− − −
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Limits Symbol
DTA144TM DTA144TE DTA144TUA DTA144TKA
VCBO
−50
VCEO
−50
VEBO
−5
IC −100
Pc 150
200
Tj 150
Tstg −55 to +150
Unit
V
V
mA mW °C °C
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency
∗ Characteristics of built-in transistor
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE R1 fT ∗
Min. −50 −50 −5
− − − 100 32.9 −
Typ. − − − − − −
250 47 250
Max. − − −
−0.5 −0.5 −0.3 600 61.1
−
Unit V V V μA μA V − kΩ
MHz
Conditions IC=−50μA IC=−1mA IE=−50μA VCB=−50V VEB=−4V IC/IB=−5mA/−0.5mA VCE=−5V, IC=−1mA
− VCE=−10V, IE=5mA, f=100MHz
DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Electrical characteristic curves
1k VCE=−5V
500
200 100 Ta=100°C
25°C 50 −40°C
20
10
5
2 1 −100μ−200μ −500μ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.collector current
−1 lC/lB=10 −500m
Ta=100°C −200m 25°C −100m −40°C −50m
−20m
−10m −5m
−2m −1m
−10μ −20μ −50μ −100μ −200μ −500μ−1m −2m −5m −10m COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage vs.collector current
Data Sheet
www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
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The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communicatio.