Silicon Switching Diode
BAS16TT1G Silicon Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
M...
Description
BAS16TT1G Silicon Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IF
200
mA
Peak Forward Surge Current Pulse Width = 10 ms
IFM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1) TA = 25°C Derated above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
555
°C/W
Total Device Dissipation,
FR−4 Board (Note 2) TA = 25°C Derated above 25°C
PD
360
mW
2.9
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
345
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3 CATHODE
1 ANODE
3
12
XX
M
G
MARKING DIAGRAM
CASE 463 SOT−416 STYLE 2
A6 MG G
1
= Specific Device Code = Date Code = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
BAS16TT1G
SOT−416 3000 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our ...
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