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CYRS1049DV33 Dataheets PDF



Part Number CYRS1049DV33
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description 4-Mbit (512 K x 8) Static RAM
Datasheet CYRS1049DV33 DatasheetCYRS1049DV33 Datasheet (PDF)

CYRS1049DV33 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance Radiation Data ❥ Total dose 300 Krad ❥ Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day with single-error correction, double error detection error detection and correction (SEC-DED EDAC) ❥ Neutron = 2.0 × 1014 N/cm2 ❥ Dose rate > 2.0 × 109 (rad(Si)/s) ❥ Latch up immunity LET = 120 MeV.cm2/mg (125 C) Processing Flows .

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CYRS1049DV33 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance Radiation Data ❥ Total dose 300 Krad ❥ Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day with single-error correction, double error detection error detection and correction (SEC-DED EDAC) ❥ Neutron = 2.0 × 1014 N/cm2 ❥ Dose rate > 2.0 × 109 (rad(Si)/s) ❥ Latch up immunity LET = 120 MeV.cm2/mg (125 C) Processing Flows ❥ V grade - Class V flow in compliance with MIL-PRF 38535 Prototyping Options ❥ Non qualified manufacturers list (QML) V grade CYPT1049DV33 devices with same functional and timing characteristics in a 36-pin ceramic flat package Features ❥ Temperature ranges ❥ Military/Space: –55 °C to 125 °C ❥ High speed ❥ tAA = 12 ns ❥ Low active power ❥ ICC = 95 mA at 12 ns (PMAX = 315 mW) ❥ Low CMOS standby power ❥ ISB2 = 15 mA ❥ 2.0 V data retention ❥ Automatic power-down when deselected ❥ Transistor-transistor logic (TTL) compatible inputs and outputs ❥ Easy memory expansion with CE and OE features ❥ Available in Pb-free 36-pin ceramic flat package Logic Block Diagram ROW DECODER SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 CE WE OE INPUT BUFFER 512K x 8 ARRAY COLUMN DECODER POWER DOWN IIO/O00 IIO/O1 1 II/OO22 IIO/O3 3 IIO/O4 4 IIO/O5 5 IIO/O6 6 IIO/O7 7 A11 A12 A13 A14 A15 A16 A17 A18 Cypress Semiconductor Corporation • 198 Champion Court Document Number: 001-64292 Rev. *C • San Jose, CA 95134-1709 • 408-943-2600 Revised March 19, 2012 CYRS1049DV33 Contents Functional Description ..................................................... 3 Selection Guide ................................................................ 3 Pin Configuration ............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 DC Electrical Characteristics .......................................... 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 AC Switching Characteristics ......................................... 6 Data Retention Characteristics ....................................... 7 Data Retention Waveform ................................................ 7 Switching Waveforms ...................................................... 8 Truth Table ...................................................................... 11 Ordering Information ...................................................... 12 Ordering Code Definitions ......................................... 12 Package Diagram ............................................................ 13 Acronyms ........................................................................ 14 Document Conventions ................................................. 14 Units of Measure ....................................................... 14 Glossary .......................................................................... 14 Document History Page ................................................. 15 Sales, Solutions, and Legal Information ...................... 16 Worldwide Sales and Design Support ....................... 16 Products .................................................................... 16 PSoC Solutions ......................................................... 16 Document Number: 001-64292 Rev. *C Page 2 of 16 CYRS1049DV33 Functional Description The CYRS1049DV33 is a high-performance complementary metal oxide semiconductor (CMOS) static RAM organized as 512 K words by 8 bits with RadStop™ technology. Cypress’s state-of-the-art RadStop technology is radiation hardened through proprietary design and process hardening techniques. The 4-Mbit fast asynchronous SRAM with RadStop technology is also QML V certified with Defense Logistics Agency Land and Maritime (DLAM). To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. See the Truth Table on page 11 for a complete description of read and write modes. The eight input or output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW) The CYRS1049DV33 is available in a ceramic 36-pin Flatpackage with center power and ground (revolutionary) pinout. Easy memory expansion is provided by utilizi.


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