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AMGP-6432 Dataheets PDF



Part Number AMGP-6432
Manufacturers AVAGO
Logo AVAGO
Description 28-31 GHz 2W SMT Packaged Power Amplifier
Datasheet AMGP-6432 DatasheetAMGP-6432 Datasheet (PDF)

AMGP-6432 28-31 GHz 2W SMT Packaged Power Amplifier Data Sheet Description The AMGP-6432 is a surface mount packaged 2-Watt power amplifier that operates from frequencies between 28 to 31 GHz.  In the operational frequency band from 29.25 to 30 GHz, it provides 33 dBm of typical output power (P1dB)/ 34 dBm Psat and 21.5dB of small-signal gain.  This PA is also suitable for high linear application where the PA demonstrates greater than than -38dBc of third order output inter modulation (OIM3) at.

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AMGP-6432 28-31 GHz 2W SMT Packaged Power Amplifier Data Sheet Description The AMGP-6432 is a surface mount packaged 2-Watt power amplifier that operates from frequencies between 28 to 31 GHz.  In the operational frequency band from 29.25 to 30 GHz, it provides 33 dBm of typical output power (P1dB)/ 34 dBm Psat and 21.5dB of small-signal gain.  This PA is also suitable for high linear application where the PA demonstrates greater than than -38dBc of third order output inter modulation (OIM3) at +18dBm/ tone output power level. Functional Block Diagram 123 84 765 Pin Function 1 Vg 2 Vd1 3 Vd2 4 RF_OUT 5 Vd2 6 Vd1 7 Vg 8 RF_IN Features  5 x 5 mm surface mount package  > +33 dBm Output Power from 28.5 to 31 GHz  50  input and output match  -40° C to +85° C operation Applications  VSAT  Microwave Radio System  Satellite Up/Down Link Export License Control: ECCN 3A001.b.2.c Package Diagram Vg Vd1 Vd2 1 23 RF_IN 8 4 RF_OUT Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 60 V ESD Human Body Model (Class 1A): 200 V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. 7 65 Vg Vd1 Vd2 ELECTRICAL SPECIFICATIONS Table 1. Absolute Minimum and Maximum [1] Ratings Parameter Specifications Comments Description Pin Min. Max. Unit Drain Supply Voltage Gate Supply Voltage RF Input Power (Pin) [2] Vd1 Vd2 Vg RFIN -2 6.5 V 0V 24 dBm CW Power Dissipation (Pdiss) 10 W Pdiss = Vd1 x Id1 + Vd2 x Id2 + Pin - Pout MSL MSL2 TCH 150 °C Channel Temperature TSTG -65 150 °C Storage Temperature Notes: 1. Operation of this device above any one of these maximum parameters may cause permanent damage 2. With the DC (typical bias) and RF applied to the device at board temperature Tb= 25° C Table 2. Recommended Operating Range Parameter Description Drain Supply Voltage Gate Supply Voltage Maximum Gate Current Pin Vd1 Vd2 Vg Ig, max Quiescent Drain Supply Current (Idq) RF Output Power (Pout) Frequency Range Thermal Resistance, ch-b Base Plate Temperature ESD Human Body Model Machine Model Vd1 Vd2 RFOUT Specifications Min. Typical 6.0 -0.1 -0.83 -3 -2.5 300 400 33 28 7.6 -40 200 60 Max. -0.6 31 +85 Unit V V mA mA dBm GHz °C/W °C V V Comments Ig, max occurs at highest RF Pout condition. Idq = Id1 + Id2 CW Channel to board 2 Electrical Specifications All data measured on a 2.4 mm connectorized production contactor board (Rogers 4350B) at Vdd1 = Vdd2 = 6 V, Idq = 0.7 A (Idq1 + Idq2), Tc = 25° C, and 50  at all ports unless otherwise stated Table 3. RF Electrical Characteristics Performance Parameter Min. Typical Max. Unit Frequency Range (GHz) 28 31 GHz Input Return Loss (dB) -15 dB Output Return Loss (dB) -12 dB Gain (dB) [1] @ Freq = 29.25 GHz (Pin = 0 dBm) @ Freq = 30 GHz Reverse Isolation (dB) 18 21.5 25 dB 18 21.3 25 -50 dB Pout [1] (Pin = 17 dBm) P1dB [2] @ Freq = 29.25 GHz @ Freq = 30 GHz @ Freq = 29.25 GHz @ Freq = 30 GHz 33 33 32 32 34.8 34.3 33.9 32.9 dBm IM3 Level -38 dBc Total Drain Current 0.7 A Note: 1. Pout & Gain measurement accuracy is subjected to the tolerance of ±0.5 dBm respectively. 2. Guaranteed by design Comments Small Signal Small Signal Vdd = 6 V, Idq = 0.7 A Vdd = 6 V, Idq = 0.7 A Small Signal Vdd = 6V , Idq = 0.7 A Vdd = 6 V, Idq = 0.7 A Vdd = 6 V, Idq = 0.7 A Vdd = 6 V, Idq = 0.7 A f = 20 MHz, Pout = 20 dBm/tone Idq 3 Product Consistency Distribution Charts at 29.25 GHz and 30 GHz, Vdd = 6 V, Idd = 0.7 A LSL USL LSL -1 -0.9 -0.8 -0.7 Vg @ Vdd = 6 V, Idq = 0.7 A, Mean = -0.68 V, LSL = -1 V, USL = -0.6 V -0.6 33 34 35 36 Pout @ 29.25 GHz (Pin = 17 dBm), Mean = 34.8 dBm, LSL = 33 dBm LSL LSL USL 33 34 35 Pout @ 30 GHz (Pin = 17 dBm), Mean = 34.3 dBm, LSL = 33 dBm 36 18 19 20 21 22 23 24 Gain @ 29.25 GHz, Mean = 21.5 dB, LSL = 18 dB, USL = 25 dB 25 LSL USL 18 19 20 21 22 23 24 Gain @ 30 GHz, Mean = 21.2 dB, LSL = 18 dB, USL = 25 dB 25 4 Selected Performance Plots All data measured on a 2.4 mm connector based evaluation board at Vdd1 = Vdd2 = 6 V, Idq = 0.7 A (Id1 + Id2), TA = 25° C, and 50  at all ports. 25 0 20 -5 15 -10 S11 [dB] S21 [dB] 10 -15 5 -20 0 25 26 27 28 29 30 31 32 33 34 35 Frequency [GHz] Figure 1. S21 (dB) Frequency Sweep -25 25 26 27 28 29 30 31 32 33 34 35 Frequency [GHz] Figure 2. S11 (dB) Frequency Sweep S22 [dB] 0 -5 -10 -15 -20 -25 25 26 27 28 29 30 31 32 33 34 35 Frequency [GHz] Figure 3. S22 (dB) Frequency Sweep S12 [dB] 0 -10 -20 -30 -40 -50 -60 -70 -80 25 26 27 28 29 30 31 32 33 34 35 Frequency [GHz] Figure 4. S12 (dB) Frequency Sweep P-1 [dBm] 34 33.5 33 32.5 32 31.5 28 28.5 29 29.5 30 30.5 31 31.5 32 Frequency [GHz] Figure 5. P1dB (dBm) Frequency Sweep IM3 Level [dBc] -10 -15 -20 -25 -30 -35 -40 IM3 (28 GHz) -45 IM3 (29 GHz) -50 IM3 (29.5 GHz) IM3 (30 GHz) -55 IM3 (31 GHz) -60 8 10 12 14 16 18 20 22 24 26 28 30 Pout [dBm/tone] Figure 6. IM3 level (dBc) vs. Output power/tone 5 Selected Performa.


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