NAND16GW3C4A

NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features ■ High density multilevel cell (MLC) Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage applications ■ NAND interface – x 8 bus width – Multiplexed address/data ■ Supply voltage: VDD = 2.7 to 3.6 V ■ Page size: (2048 + 64 spare) bytes ■ Block size: (256K + 8K spare) bytes ■ Multiplane architecture – Array split into two independent planes – Program/erase operations can be performed on both planes at the same time ■ Page read/program – Random access: 60 µs (max) – Sequential access: 25 ns (min) – Page program operation time: 800 µs (typ) ■ Multipage program time (2 pages): 800 µs (typ) ■ Fast block erase – Block erase time: 2.5 ms (typ) ■ Multiblock erase time (2 blocks): 2.5 ms (typ) ■ Status register ■ Electronic signature ■ Serial number option ■ Chip enable ‘don’t care’ TSOP48 12 x 20 mm (N) LGA52 12 x 17 mm (N) ■ Data protection – Hardware program/erase locked during power transitions ■ Development tools – Error correction code models – Bad block management and wear leveling algorithm – HW simulation models ■ Data integrity – 10,000 program/erase cycles (with ECC) – 10 years data retention ■ ECOPACK® packages available January 2008 Rev 2 1/58 www.numonyx.com 1 Contents NAND08GW3C2A, NAND16GW3C2A 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....