NAND Flash memory
NAND08GW3C2A NAND16GW3C4A
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Features
■ H...
Description
NAND08GW3C2A NAND16GW3C4A
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Features
■ High density multilevel cell (MLC) Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage applications
■ NAND interface – x 8 bus width – Multiplexed address/data
■ Supply voltage: VDD = 2.7 to 3.6 V ■ Page size: (2048 + 64 spare) bytes
■ Block size: (256K + 8K spare) bytes
■ Multiplane architecture – Array split into two independent planes – Program/erase operations can be performed on both planes at the same time
■ Page read/program – Random access: 60 µs (max) – Sequential access: 25 ns (min) – Page program operation time: 800 µs (typ)
■ Multipage program time (2 pages): 800 µs (typ)
■ Fast block erase – Block erase time: 2.5 ms (typ)
■ Multiblock erase time (2 blocks): 2.5 ms (typ)
■ Status register
■ Electronic signature
■ Serial number option
■ Chip enable ‘don’t care’
TSOP48 12 x 20 mm (N)
LGA52 12 x 17 mm (N)
■ Data protection – Hardware program/erase locked during power transitions
■ Development tools – Error correction code models – Bad block management and wear leveling algorithm – HW simulation models
■ Data integrity – 10,000 program/erase cycles (with ECC) – 10 years data retention
■ ECOPACK® packages available
January 2008
Rev 2
1/58
www.numonyx.com
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Contents
NAND08GW3C2A, NAND16GW3C2A
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
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