NAND04GW3B2B

NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features ■ High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■ NAND Interface – x8 bus width – Multiplexed Address/ Data ■ Supply voltage – 3.0V device: VDD = 2.7 to 3.6V ■ Page size – (2048 + 64 spare) Bytes ■ Block size – (128K + 4K spare) Bytes ■ Page Read/Program – Random access: 25µs (max) – Sequential access: 30ns (min) – Page program time: 200µs (typ) ■ Copy Back Program mode – Fast page copy without external buffering ■ Cache Program and Cache Read modes – Internal Cache Register to improve the program and read throughputs ■ Fast Block Erase – Block erase time: 2ms (typ) ■ Status Register ■ Electronic Signature ■ Chip Enable ‘don’t care’ – for simple interface with microcontroller ■ Serial Number option TSOP48 12 x 20mm ■ Data protection – Hardware and Software Block Locking – Hardware Program/Erase locked during Power transitions ■ Data integrity – 100,000 Program/Erase cycles (with ECC) – 10 years Data Retention ■ ECOPACK® package ■ Development tools – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models December 2007 Rev 5 1/58 www.numonyx.com 1 Contents Contents NAND04GW3B2B, NAND08GW3B2A 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . ...