3DD13001B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE · power switching applications TO-92 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT tf tS Test conditions IC= 100μA , IE=0 IC= 1mA , IB=0 IE= 100μA, IC=0 VCB= 600V , IE=0 VCE= 400V, IB=0 VEB=7V, IC=0 VCE= 20V, IC= 20mA VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 mA IC= 50 mA, IB= 10mA VCE= 20V, IC=20mA f = 1MHz IC=50mA, IB1=-IB2=5mA, VCC=45V Min 600 400 7 10 5 8 Typ Max 100 200 100 40 0.5 1.2 0.3 1.5 Unit V V V μA μA μA V V MHz μs μs CLASSIFICATION OF hFE(1) Range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40 B,Mar,2012 ...