KGH25N120NDA

SEMICONDUCTOR TECHNICAL DATA KGH25N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology H A N O D E d PP 123 IF C J R QB K G L M T 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0.20 D 2.00 +_ 0.20 d 1.00 +_ 0.20 E 3.00 +_ 0.20 F 3.80 +_ 0.20 G 3.50 +_ 0.20 H 13.90 +_ 0.20 I 12.76 +_ 0.20 J 23.40 +_ 0.20 K 1.5+0.15-0.05 L 16.50 +_ 0.30 M 1.40 +_ 0.20 N 13.60 +_ 0.20 O 9.60 +_ 0.20 P 5.45 +_ 0.30 Q 3.20 +_ 0.10 R 18.70 +_ 0.20 T 0.60+0.15-0.05 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 1200 20 V V Collector Current Pulsed Collector Current @TC=25 @TC=100 Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current 40 A IC 25 A ICM* 75 A IF 25 A IFM 110 A Maximum Power Dissipation Maximum Junction Temperature @TC=25 @TC=100 300 W PD 120 W Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature TO-3P(N)-E C G E THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) SYMBOL R JC R JC MAX. 0.4 1.2 UNIT /W /W 2009. 2. 19 Revision ...