AH225

AH225 1W High Linearity InGaP HBT Amplifier Applications  Repeaters  Base Station Transceivers  High Power Amplifiers  Mobile Infrastructure  LTE / WCDMA / CDMA / WiMAX Product Features  400-2700 MHz  15.5 dB Gain at 2140 MHz  +31 dBm P1dB  +46 dBm Output IP3  300 mA Quiescent Current  +5 V Single Supply  MTTF > 100 Years  Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz, 31.5 dBm CW Pout or 23 dBm WCDMA Pout  Lead-free/RoHS-compliant SOIC-8 Package General Description The AH225 is a high dynamic range driver amplifier in a low-cost surface-mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.2 dBm of compressed 1dB power. The integrated active bias circuitry in the devices enables excellent stable linearity performance over temperature. It is housed in a lead-free/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH225 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH225 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band. SOIC-8 Package Functional Block Diagram Pin Configuration Pin # 1 2, 4, 5 3 6, 7 8 Backside Paddle Symbol Vbias N/C RF_in RF_Out Iref RF/DC GND Ordering Information Data Sheet: R...