isc Silicon NPN Power Transistor
2SD818
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.) ·...
isc Silicon
NPN Power
Transistor
2SD818
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
ICP= 2A; IB1(end)= 0.6A
2SD818
MIN TYP. MAX UNIT
4.0 8.0
V
1.5
V
10 μA
1.0 mA
8
20
95
pF
3
MHz
0.5 1.0 μs
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