AS4C4M4F1

® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 Features Organization: 4,194,304 words × 4 bits High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O Fast page mode Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh TTL-compatible, three-state I/O JEDEC standard package - 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP Latch-up current ≥ 200 mA ESD protection ≥ 2000 mV Industrial and commercial temperature available Pin arrangement SOJ TSOP VCC I/O0 I/O1 WE RAS *NC/A11 1 2 3 4 5 6 26 GND 25 I/O3 VCC 1 I/O0 2 24 I/O2 I/O1 3 23 CAS WE 4 22 OE RAS 5 21 A9 *NC/A11 6 26 GND 25 I/O3 24 I/O2 23 CAS 22 OE 21 A9 AS4C4M4F0 AS4C4M4F0 A10 8 A0 9 A1 10 A2 11 A3 12 VCC 13 19 A8 18 A7 17 A6 16 A5 15 A4 14 GND A10 8 A0 9 A1 10 A2 11 A3 12 VCC 13 19 18 17 16 15 14 *NC on 2K refresh version; A11 on 4K refresh version A8 A7 A6 A5 A4 GND Pin designation Pin(s) Description A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write...