DatasheetsPDF.com
AS4C4M4F0
5V 4M x 4 CMOS DRAM
Description
® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 Features Organization: 4,194,304 words × 4 bits High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O Fast page mode Refresh - 4096 refresh cycles, 64 ms refresh inter...
Alliance Semiconductor
Download AS4C4M4F0 Datasheet
Similar Datasheet
AS4C4M4
16M FPM DRAM
- Austin Semiconductor
AS4C4M4E0
4M x 4 CMOS DRAM
- Alliance Semiconductor
AS4C4M4E1
4M x 4 CMOS DRAM
- Alliance Semiconductor
AS4C4M4F0
5V 4M x 4 CMOS DRAM
- Alliance Semiconductor
AS4C4M4F1
5V 4M x 4 CMOS DRAM
- Alliance Semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
