SUM45N25-58

New Product SUM45N25-58 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 250 0.058 at VGS = 10 V 0.062 at VGS = 6 V ID (A) 45 43 TO-263 FEATURES TrenchFET® Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package APPLICATIONS Primary Side Switch Plasma Display Panel Sustainer Function RoHS COMPLIANT D G DS Top View Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Typical Avalanche Voltaged VDS (Avalanche)Typ Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Guaranteed by design Document Number: 72314 S-70311-Rev. C, 12-Feb-07 Symbol RthJA RthJC Limit 250 300 ± 30 45 25 90 35 61 375b 3.75 - 55 to 175 Limit 40 0.4 Unit V A mJ W °C Unit °C/W www.vishay.com 1 SUM45N25-58 Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min ...