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K1166 Dataheets PDF



Part Number K1166
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET
Datasheet K1166 DatasheetK1166 Datasheet (PDF)

2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1165, 2SK1166 Absolute Maximum Ratings Item.

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2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1165, 2SK1166 Absolute Maximum Ratings Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Drain to source breakdown voltage 2SK1165 2SK1166 V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current IGSS Zero gate voltage drain 2SK1165 current 2SK1166 IDSS Gate to source cutoff voltage VGS(off) Static drain to source on 2SK1165 state resistance 2SK1166 RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Body to drain diode forward voltage VDF Body to drain diode reverse recovery time trr Note: 3. Pulse test Min 450 500 ±30 — — 2.0 — — 6.0 — — — — — — — — — Typ — — — — — 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450 Ratings 450 500 ±30 12 48 12 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Max — — ±10 250 3.0 0.55 0.60 — — — — — — — — — — Unit V (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 V IG = ±100 µA, VDS = 0 µA VGS = ±25 V, VDS = 0 µA VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 V ID = 1 mA, VDS = 10 V Ω ID = 6 A, VGS = 10 V *3 S ID = 6 A, VDS = 10 V *3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 6 A, VGS = 10 V, ns RL = 5 Ω ns ns V IF = 12 A, VGS = 0 ns IF = 12 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1165, 2SK1166 Main Characteristics Power vs. Temperature Derating 120 80 40 Channel Dissipation Pch (W) Drain Current ID (A) 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics 20 10 V 8V 6V 16 5.5 V 12 5.0 V 8 4.5 V 4 VGS = 4 V 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 15 A 6 10 A 4 ID = 5 A 2 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Rev.2.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 100 30 10 3 1.0 0.3 0.1 1 is LiOpmietreatdiobny Area DS(on) this in R DC OPpWer=at1io0nm(1TsCm(1=s1s20h50o°µ1Ct)0s) µs Ta = 25°C 2SK1166 2SK1165 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 20 16 VDS = 20 V Pulse Test 12 8 75°C 4 –25°C TC = 25°C 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 VGS = 10 V 1.0 0.5 15 V 0.2 0.1 0.05 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 2SK1165, 2SK1166 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 1.0 VGS = 10 V Pulse Test 0.8 15 A 10 A ID = 5 A 0.6 0.4 0.2 0 –40 0 40 80 120 160 Case Temperature TC (°C) Reverse Recovery Time trr (ns) Body to Drain Diode Reverse Recovery Time 5,000 2,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 V Pulse Test 1,000 500 200 100 50 0.2 0.5 1.0 2 5 10 20 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 VDD = 100 V 250 V 400 VDS 400 V VGS 300 20 16 12 200 8 ID = 12 A 100 VDD = 400 V 250 V 100 V 4 0 0 20 40 60 80 100 Gate Charge Qg (nc) Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 50 VDS = 20 V Pulse Test 20 10 –25°C TC = 25°C 75°C 5 2 1.0 0.5 0.2 0.5 1.0 2 5 10 20 Drain Current ID (A) 10,000 1,000 100 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss Crss 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics 500 VGS = 10 V VDD =• • 30 V PW = 2 µs, duty < 1% 200 td (off) 100 tr 50 tf 20 td (on) 10 5 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Rev.2.00 Sep 07, 2005 page 4 of 6 Normalized Transient Thermal Impedance γS (t) Reverse Drain Current IDR (A) 2SK1165, 2SK1166 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test 16 12 8 4 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 3 D=1 1.0 0.5 Normalized Transient Thermal Impedance vs. Pulse Width TC = 25°C 0.3 0.2 .


K1165 K1166 C3518-Z


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