Document
2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
REJ03G0914-0200 (Previous: ADE-208-1252)
Rev.2.00 Sep 07, 2005
D
G
1. Gate 2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1165, 2SK1166
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1165
2SK1166
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS
VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch Tstg
Item
Symbol
Drain to source breakdown voltage
2SK1165 2SK1166
V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate voltage drain 2SK1165
current
2SK1166
IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on 2SK1165
state resistance
2SK1166
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery time
trr
Note: 3. Pulse test
Min 450 500 ±30 — —
2.0 — — 6.0 — — — — — — — — —
Typ —
— — —
— 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450
Ratings 450 500 ±30 12 48 12 100 150
–55 to +150
(Ta = 25°C) Unit
V
V A A A W °C °C
Max —
— ±10 250
3.0 0.55 0.60 — — — — — — — — — —
Unit V
(Ta = 25°C) Test conditions ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0 µA VGS = ±25 V, VDS = 0 µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0 V ID = 1 mA, VDS = 10 V Ω ID = 6 A, VGS = 10 V *3
S ID = 6 A, VDS = 10 V *3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 6 A, VGS = 10 V, ns RL = 5 Ω ns ns V IF = 12 A, VGS = 0 ns IF = 12 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1165, 2SK1166
Main Characteristics
Power vs. Temperature Derating 120
80
40
Channel Dissipation Pch (W)
Drain Current ID (A)
0 50 100 150 Case Temperature TC (°C)
Typical Output Characteristics
20 10 V
8V
6V 16
5.5 V
12 5.0 V
8 4.5 V
4 VGS = 4 V
0 10 20 30 40 50 Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
10 Pulse Test
8 15 A
6 10 A
4 ID = 5 A
2
0 4 8 12 16 20 Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Static Drain to Source on State Resistance RDS (on) (Ω)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
100
30 10
3 1.0
0.3 0.1
1
is
LiOpmietreatdiobny
Area
DS(on)
this
in R
DC OPpWer=at1io0nm(1TsCm(1=s1s20h50o°µ1Ct)0s) µs
Ta = 25°C
2SK1166 2SK1165
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics 20
16
VDS = 20 V Pulse Test
12
8 75°C
4
–25°C TC = 25°C
0 2 4 6 8 10 Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
5
Pulse Test 2
VGS = 10 V
1.0
0.5 15 V
0.2 0.1
0.05 0.5 1.0 2
5 10 20
Drain Current ID (A)
50
2SK1165, 2SK1166
Static Drain to Source on State Resistance RDS (on) (Ω)
Static Drain to Source on State Resistance vs. Temperature
1.0
VGS = 10 V Pulse Test
0.8
15 A 10 A
ID = 5 A 0.6
0.4
0.2
0 –40 0
40 80 120 160
Case Temperature TC (°C)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse Recovery Time
5,000 2,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0 V Pulse Test
1,000
500
200
100
50 0.2 0.5 1.0 2
5 10 20
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
500 VDD = 100 V 250 V
400 VDS 400 V VGS
300
20 16 12
200 8 ID = 12 A
100 VDD = 400 V 250 V
100 V
4
0 0 20 40 60 80 100
Gate Charge Qg (nc)
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance vs. Drain Current
50 VDS = 20 V Pulse Test
20
10
–25°C TC = 25°C
75°C
5
2
1.0
0.5 0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
10,000 1,000 100
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz Ciss
Coss
Crss 10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=• •
30
V
PW = 2 µs, duty < 1%
200 td (off)
100 tr 50 tf
20 td (on)
10
5 0.5 1.0 2
5 10 20
Drain Current ID (A)
50
Rev.2.00 Sep 07, 2005 page 4 of 6
Normalized Transient Thermal Impedance γS (t) Reverse Drain Current IDR (A)
2SK1165, 2SK1166
Reverse Drain Current vs. Source to Drain Voltage 20
Pulse Test 16
12
8 4 5, 10 V
VGS = 0, –10 V
0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V)
3
D=1 1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width TC = 25°C
0.3 0.2
.