High speed IGBT
Low V IGBT CE(sat)
High speed IGBT
VCES
IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V
IC25
34 A 34 A
VCE(sat)
3....
Description
Low V IGBT CE(sat)
High speed IGBT
VCES
IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V
IC25
34 A 34 A
VCE(sat)
3.5 V 4.0 V
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 300 µH
PC TJ TJM Tstg Md Weight
TC = 25°C Mounting torque (M3)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
1000 1000
V V
±20 V ±30 V
34 A 17 A 68 A
ICM = 34 @ 0.8 V
CES
150
A W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
BVCES V
GE(th)
I
CES
IGES VCE(sat)
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 3 mA, VGE = 0 V
I C
=
250
µA,
V CE
=
V GE
V = 0.8 V CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
T J
=
25°C
TJ = 125°C
17N100 17N100A
1000 2.5
V 5V
250 µA 1 mA
±100 nA
3.5 V 4.0 V
TO-247 AD (IXGH)
G CE
TO-204 AE (IXGM)
G = Gate, E = Emitter,
C
C = Collector, TAB = Collector
Features l International standard packages l 2nd generation HDMOSTM process l Low V
CE(sat)
- for low on-state conduction losses
l High current handling capability l MOS Gate turn-on
- drive simplicity l Voltage rating guaranteed at high
temperature (125°C)
Applications l AC motor speed control l DC servo and robot drives l DC chopp...
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