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IXGH17N100

IXYS Corporation

High speed IGBT

Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3....


IXYS Corporation

IXGH17N100

File Download Download IXGH17N100 Datasheet


Description
Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 300 µH PC TJ TJM Tstg Md Weight TC = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 1000 1000 V V ±20 V ±30 V 34 A 17 A 68 A ICM = 34 @ 0.8 V CES 150 A W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Symbol BVCES V GE(th) I CES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 3 mA, VGE = 0 V I C = 250 µA, V CE = V GE V = 0.8 V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V T J = 25°C TJ = 125°C 17N100 17N100A 1000 2.5 V 5V 250 µA 1 mA ±100 nA 3.5 V 4.0 V TO-247 AD (IXGH) G CE TO-204 AE (IXGM) G = Gate, E = Emitter, C C = Collector, TAB = Collector Features l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) Applications l AC motor speed control l DC servo and robot drives l DC chopp...




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