TPCS8201

TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance: |Yfs| = 13 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) l Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Single-device Drain power dissipation operation (Note 3a) (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device Drain power dissipation operation (Note 3a) (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD (1) PD(2) PD (1) PD (2) EAS IAR EAR Tch Tstg 20 20 ±12 5 20 1.1 0.75 0.6 0.35 32.5 5 0.075 150 −55~150 V V V A W W mJ A mJ °C °C Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-3R1E We...