Document
2SD667, 2SD667A
Silicon NPN Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SB647/A
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
REJ03G0769-0200 (Previous ADE-208-1137)
Rev.2.00 Aug.10.2005
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg
2SD667 120 80 5 1 2 0.9 150
–55 to +150
2SD667A 120 100 5 1 2 0.9 150
–50 to +150
(Ta = 25°C)
Unit V V V A A W °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD667, 2SD667A
Electrical Characteristics
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio
Symbol V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO hFE1*1
2SD667
Min Typ Max
120 —
—
80 — —
5 ——
— — 10 60 — 320
2SD667A
Min Typ Max
120 —
—
100 —
—
5 ——
— — 10 60 — 200
hFE2 30 — — 30 — —
Collector to emitter saturation voltage
VCE(sat)
—
—
1
——
1
Base to emitter voltage VBE — — 1.5 — — 1.5
Gain bandwidth product
fT
— 140 —
— 140 —
Collector output
Cob — 12 — —
capacitance
Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows. 2. Pulse test
B CD
2SD667
60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200
12
—
(Ta = 25°C)
Unit Test conditions V IC = 10 µA, IE = 0
V IC = 1 mA, RBE = ∞
V IE = 10 µA, IC = 0
µA
V V MHz pF
VCB = 100 V, IE = 0
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 500 mA*2
IC = 500 mA, IB = 50 mA*2
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 150 mA*2
VCB = 10 V, IE = 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 5
Collector Power Dissipation PC (W)
2SD667, 2SD667A
Main Characteristics
Maximum Collector Dissipation Curve 1.2
0.8
0.4
0 50 100 150 Ambient Temperature Ta (°C)
Collector Current IC (mA)
Ta = 75°C 25
–25
Typical Transfer Characteristics 500
VCE = 5 V 200 100
50
20 10
5
2 1
0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V)
Saturation Voltage vs. Collector Current
0.6 1.2
IC = 10 IB 0.5 1.0 Pulse
0.4 0.8 VBE(sat) Ta = –25°C 25
0.3 0.6
75
0.2 0.4
0.1 0.2 VCE(sat)
Ta75=25–25°C
00
1 3 10 30 100 300 1,000
Collector Current IC (mA)
Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V)
Rev.2.00 Aug 10, 2005 page 3 of 5
Gain Bandwidth Product fT (MHz)
DC Current Transfer Ratio hFE
Collector Current IC (A)
Typical Output Characteristics
1.0 35 30 25
0.8 20 15
0.6 10 5
0.4 P 2
0.2
C = 0.9 W
1
0.5mA
IB = 0
0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
300 VCE = 5 V
250 Ta = 75°C 200 25
–25 150
100
50
0 1 3 10 30 100 300 1,000 Collector Current IC (mA)
Gain Bandwidth Product vs. Collector Current
240 VCE = 5 V
200
160
120
80
40
0 10 30 100 300 1,000
Collector Current IC (mA)
2SD667, 2SD667A
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs. Collector to Base Voltage
200 f = 1 MHz
100 IE = 0
50
20 10
5
2 12
5 10 20 50 100
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD667, 2SD667A
Package Dimensions
JEITA Package Code SC-51
RENESAS Code PRSS0003DC-A
Package Name TO-92 Mod / TO-92 ModV
MASS[Typ.] 0.35g
4.8 ± 0.4
3.8 ± 0.4
Unit: mm
8.0 ± 0.5
0.7 2.3 Max
10.1 Min
0.65 ± 0.1 0.75 Max 0.60 Max 0.55 Max
0.5 Max
1.27 2.54
Ordering Information
Part Name
Quantity
Shipping Container
2SD667BTZ-E 2SD667CTZ-E
2500
Hold Box, Radial Taping
2SD667DTZ-E
2SD667ABTZ-E 2SD667ACTZ-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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