DatasheetsPDF.com

IRG5K75HF06A

International Rectifier

IGBT Half-Bridge

IRG5K50P5K50PM06E VCES = 600V IC = 75A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 75A Applications:  Industrial ...


International Rectifier

IRG5K75HF06A

File Download Download IRG5K75HF06A Datasheet


Description
IRG5K50P5K50PM06E VCES = 600V IC = 75A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 75A Applications:  Industrial Motor Drive  Uninterruptible Power Supply  Welding and Cutting Machine  Switched Mode Power Supply  Induction Heating  AC Inverter Drive IRG5K75HF06A IGBT Half-Bridge POWIR 34™ Package Features Low VCE(ON) and Switching Losses 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area POWIR 34™ Package Lead Free Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Industry Standard RoHS Compliant, Environmental Friendly Base Part Number IRG5K75HF06A Package Type POWIR 34™ Standard Pack Box Quantity 80 Orderable Part Number IRG5K75HF06A Absolute Maximum Ratings of IGBT VCES VGES Collector to Emitter Voltage Continuous Gate to Emitter Voltage IC Continuous Collector Current ICM Pulse Collector Current TC = 80°C TC = 25°C TJ = 150°C PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C TJ Maximum IGBT Junction Temperature TJOP Maximum Operating Junction Temperature Range Tstg Storage Temperature 600 ±20 75 140 150 330 150 -40 to +150 -40 to +125 V V A A A W °C °C °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K75HF06A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. Typ. Max. Unit Test Conditions V(BR)CES VGE(th) Collector to Emitter Breakdown Voltage Gate Threshold Voltage 600 3.5 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)