AOC2422

AOC2422 8V N-Channel MOSFET General Description The AOC2422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. Product Summary VDS ID (at VGS=2.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) RDS(ON) (at VGS=1.5V) RDS(ON) (at VGS=1.2V) Typical ESD protection 8V 3.5A < 33mΩ < 38mΩ < 43mΩ < 58mΩ HBM Class 2 MCSP 0.97x0.97A_4 Top View Bottom View Top View Pin1(G) Bottom View 32 SS D 4 G 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 8 ±5 3.5 35 0.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Typ 110 160 Max 140 200 D S Units V V A W °C Units °C/W °C/W Rev 0 : Nov. 2012 www.aosmd.com Page 1 of 5 AOC2422 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD D...