AOC2412

AOC2412 20V N-Channel MOSFET General Description The AOC2412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 8V VGS(MAX) rating. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) Typical ESD protection 20V 4.5A < 23mΩ < 26mΩ < 30mΩ HBM Class 3A MCSP 1.57x1.57_4 Top View Bottom View Top View Pin1(G) Bottom View 32 DD S 4 G 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 4.5 65 0.55 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Typ 140 190 Max 170 230 D S Units V V A W °C Units °C/W °C/W Rev 0 : Nov. 2012 www.aosmd.com Page 1 of 5 AOC2412 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode F...