INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
DESCRIPTION ·High Power Gain...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC1969
DESCRIPTION ·High Power Gain-
: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability
APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage RBE= ∞
25
V
VEBO Emitter-Base Voltage
5V
IC Collector Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
6A
20 W
1.7
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Rth j-c
Thermal Resistance,Junction to Ambient 73.5 ℃/W
Thermal Resistance,Junction to Case
6.25 ℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC1969
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
60 25
V V
V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current
IE= 5mA, IC= 0 VCB= 30V; IE= 0
5V 0.1 mA
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
0.1 mA
hFE DC Current Gain PO Output Power ηC Collector Efficiency
IC= 10mA; VCE= 12V
10 180
16 18 VCC= 12V; Pin= 1W; f= 27MHz
60 70
W %
hFE Classifications XA
B
10-2...
