Description
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers withi...
Description
The Eleflow 2SC1969 is a silicon
NPN epitaxial planar type
transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications.
Features
High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
Emitter ballasted construction for reliability and performance.
Manufactured incorporating recyclable RoHS compliant materials.
Ability to periodically withstand infinite VSWR load when operated @ Vcc = 16V, Po = 20W, f = 27MHz.
Application
10 to 14 watts output power class AB amplifier applications within HF band.
2SC1969
TO-220 Package
Absolute Maximum Ratings (Tc = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Vcbo Vebo Veco Ic
Pc
Tj Tstg Rth-a Rth-c
Collector to base voltage Emitter to base voltage Collector to emitter voltage Collector current
Collector dissipation
Junction temperature Storage temperature
Thermal resistance
Rbe =
Ta = 25°C Tc = 25°C
Junction to ambient Junction to case
Note: Above parameters are guaranteed independently
Ratings
60 5 25 6 1.7 20 150 -55 to 150 73.5 6.25
Unit
V V V A W W °C °C °C/W °C/W
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol
Parameter
V(BR)ebo V(BR)cbo V(BR)ceo Icbo Iebo hfe
Po
ηc
Emitter to base breakdown voltage Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cut-off current Emitter cut-off current
DC forward current gain*
Output power
Collector efficiency
Test Conditions
Ie = 5mA, Ic = 0 Ic...
