WTX168

Winsem Technology Corp. High Voltage NPN Power Transistor Features High Voltage High Switch Speed BVCEO : 400V BVCBO : 700V IC : 3A VCE(SAT) : 2V @ IC / IB = 2A / 0.5A Application Electronic Ballasts Adapter Lighting WTX168 /WTF168 High Voltage NPN Transistor ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Collect-Break Down Voltage Emitter-Base Voltage Total Power Dissipation @Tc ≦ 25oC / TO-220 Total Power Dissipation @Tc ≦ 25oC / TO-220F Collector Peak Current (tp < 5ms) Collector Current Base Peak Current (tp < 5ms) Base Current Maximum Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. Pw=300uS, Duty≦ 2% Version A10 Symbol VCBO VCEO VCES VEBO Ptot Ptot ICM IC IBM IB TJ TSTG Limit 700 400 700 9 60 28 6 3 3 1.5 +150 -65 ~ +150 Unit V V V V W W A A A A ℃ ℃ Page 1 Winsem Technology Corp. ELECTRICAL SPECIFICATIONS WTX168 / WTF168 High Voltage NPN Transistor Parameter Symbol Test Condition Min Typ Max Unit Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 10mA, IB=0 IC = 10mA, IE=0 700 ─ 400 ─ ─ ─ V V Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 9─ ─ V Collector Cutoff Current ICBO VCB = 700V, IE=0 ─ ─ 100 uA Emitter Cutoff Current IEBO VEB = 9V, IC=0 ─ ─ 10 uA DC Current Gain hFE1 hFE2 hFE3 VCE = 5V, IC=10mA VCE = 5V, IC=1A VCE = 5V, IC=2A 10 27 ─ 10 ─ 30 4 ─ 24 Collector-Emitter Saturation Vo...