Winsem Technology Corp.
High Voltage NPN Power Transistor
Features
• High Voltage • High Switch Speed • BVCEO : 400V • B...
Winsem Technology Corp.
High Voltage
NPN Power
Transistor
Features
High Voltage High Switch Speed BVCEO : 400V BVCBO : 700V IC : 3A VCE(SAT) : 2V @ IC / IB = 2A / 0.5A
Application
Electronic Ballasts Adapter Lighting
WTX168 /WTF168
High Voltage
NPN Transistor
ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
Parameter Collector-Base Voltage Collector-Emitter Voltage Collect-Break Down Voltage Emitter-Base Voltage Total Power Dissipation @Tc ≦ 25oC / TO-220 Total Power Dissipation @Tc ≦ 25oC / TO-220F Collector Peak Current (tp < 5ms) Collector Current Base Peak Current (tp < 5ms) Base Current Maximum Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. Pw=300uS, Duty≦ 2%
Version A10
Symbol
VCBO VCEO VCES VEBO
Ptot Ptot ICM IC IBM IB TJ TSTG
Limit
700 400 700
9 60 28 6 3 3 1.5 +150 -65 ~ +150
Unit V V V V W W A A A A ℃ ℃
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Winsem Technology Corp.
ELECTRICAL SPECIFICATIONS
WTX168 / WTF168
High Voltage
NPN Transistor
Parameter
Symbol
Test Condition
Min Typ Max Unit
Collector-Base Voltage Collector-Emitter Breakdown Voltage
BVCBO BVCEO
IC = 10mA, IB=0 IC = 10mA, IE=0
700 ─ 400 ─
─ ─
V V
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
9─
─
V
Collector Cutoff Current
ICBO VCB = 700V, IE=0
─ ─ 100 uA
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
─ ─ 10 uA
DC Current Gain
hFE1 hFE2 hFE3
VCE = 5V, IC=10mA VCE = 5V, IC=1A VCE = 5V, IC=2A
10 27 ─
10 ─
30
4 ─ 24
Collector-Emitter Saturation Vo...