WTBV56DM

Winsem Technology Corp. High Voltage NPN Transistor WTBV56DM (R) / WTI56D POWER TRANSISTOR TO-126 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 R Pin Definition 1. Base 2. Collector 3. Emitter Features High Voltage Very High Switch Speed BVCEO : 400V BVCBO : 800V IC : 4A Silicon Triple Diffused Type Application Electronic Ballasts Adapter Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Version A12 Max Rating 800 400 9 4 8 20 35 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV56DM (R) / WTI56D POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current BVCBO BVCEO BVEBO ICBO IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 1mA, IC=0 VCB = 700V, IE=0 Emitter Cutoff Current IEBO hFE1 VEB = 7V, IC=0 VCE = 5V, IC=500mA DC Current Gain hFE2 VCE = 5V, IC=1A hFE3 VCE = 5V, IC=2A Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(SAT1) IC/IB = 0.5A / 0.1A VCE(SAT2) IC/IB = 1A / 0.25A VBE(SAT1) IC/IB = 0.5A / 0.1A VBE(SAT2) IC/IB = 1A / 0.25A Min Typ Max Unit 800 ─ ...