WTBV49SL

Winsem Technology Corp. High Voltage NPN Transistor WTBV49SL / WTI49S POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base Features High Voltage High Switch Speed BVCEO : 500V BVCBO : 850V IC : 1.5A VCE(SAT) : 0.5V@Ic / IB=0.5A / 0.1A Silicon Triple Diffused Type Application Electronic Ballasts Adapter Charger Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO92) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Ptot TJ TSTG Version A10 Max Rating 850 500 10 1.5 3 1.96 30 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV49SL / WTI49S POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Min Typ Max Unit Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current BVCBO BVCEO BVEBO ICBO IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 1mA, IC=0 VCB = 800V, IE=0 850 ─ 500 ─ 9─ ── ─V ─V ─V 10 ㎂ Emitter Cutoff Current IEBO VEB = 10V, IC=0 ── hFE1 VCE = 10V, IC=10mA 15 ─ 0.5 ㎂ 40 DC Current Gain hFE2 VCE = 10V, IC=400mA 20 ─ 40 hFE3 VCE = 10V, IC=1A 6 ─ 40 Collector-Emitter Saturation Voltage VCE(SAT1) IC/IB = 0.5A / 0.1A VCE(SAT2) IC/IB = 1.0A / 0.25A VCE(SAT3) IC/IB = 1.5A / 0.5A ─ 0.3...