Document
NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors
High Current Switch TO251
Features: D Low Collector−Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time D TO251 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, Continuous
IC. .
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4A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector TTAC
P=o+w2e5r°CDis.s.i.p.a.ti.o.n.,.P. C. . = +25°C . . . . . . . . . . . .
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1W 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain−Bandwidth Product NTE2526 NTE2527
ICBO IEBO hFE
fT
VCB = 100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500mA VCE = 5V, IC = 3A
VCE = 10V, IC = 500mA
Output Capacitance NTE2527
Cob VCB = 10V, f = 1MHz
NTE2526
Min Typ Max Unit − − 1.0 μA − − 1.0 μA
140 − 400 40 − −
− 180 − MHz − 130 − MHz
− 40 − pF − 65 − pF
Rev. 8−10
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector−Emitter Saturation Voltage NTE2526
VCE(sat) IC = 2A, IB = 200mA
− 150 400 mV
NTE2527
− 200 500 mV
Base−Emitter Saturation Voltage
VBE(sat) IC = 2A, IB = 200mA
− 0.9 1.2 V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10μA, IE = 0
120 −
−V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
100 −
−V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10μA, IC = 0
6 − −V
Turn−On Time Storage Time
NTE2526
ton tstg
VP10CuIlCBs1e==W5−0i1dV0t,hIBV=2B=E20=ICμ−s=5,2VA,,
Duty Cycle ≤ 1%, Note 1
− 100 − ns − 900 − ns
NTE2527
− 800 − ns
Fall Time
tf
50 ns
Note 1. For NTE2527, the polarity is reversed.
.059 (1.5)
.256 (6.5) .197 (5.0)
C
BC E
.090 (2.3) .275 (7.0)
.295 (7.5)
.090 (2.3)
.002 (0.5) .002(0.5)
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