DatasheetsPDF.com

NTE2527 Dataheets PDF



Part Number NTE2527
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE2527 DatasheetNTE2527 Datasheet (PDF)

NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch TO251 Features: D Low Collector−Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector Emitter Voltage, VCEO . . . . . . ..

  NTE2527   NTE2527



Document
NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch TO251 Features: D Low Collector−Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, Continuous IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector TTAC P=o+w2e5r°CDis.s.i.p.a.ti.o.n.,.P. C. . = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain−Bandwidth Product NTE2526 NTE2527 ICBO IEBO hFE fT VCB = 100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500mA VCE = 5V, IC = 3A VCE = 10V, IC = 500mA Output Capacitance NTE2527 Cob VCB = 10V, f = 1MHz NTE2526 Min Typ Max Unit − − 1.0 μA − − 1.0 μA 140 − 400 40 − − − 180 − MHz − 130 − MHz − 40 − pF − 65 − pF Rev. 8−10 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Saturation Voltage NTE2526 VCE(sat) IC = 2A, IB = 200mA − 150 400 mV NTE2527 − 200 500 mV Base−Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 200mA − 0.9 1.2 V Collector−Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 120 − −V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 100 − −V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 6 − −V Turn−On Time Storage Time NTE2526 ton tstg VP10CuIlCBs1e==W5−0i1dV0t,hIBV=2B=E20=ICμ−s=5,2VA,, Duty Cycle ≤ 1%, Note 1 − 100 − ns − 900 − ns NTE2527 − 800 − ns Fall Time tf 50 ns Note 1. For NTE2527, the polarity is reversed. .059 (1.5) .256 (6.5) .197 (5.0) C BC E .090 (2.3) .275 (7.0) .295 (7.5) .090 (2.3) .002 (0.5) .002(0.5) .


APT13003D NTE2527 WTBV49L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)