Document
OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages
FEATURES
• Isolated Hermetic Metal Packages • Ultra Low RDS(on) • Low Conductive Loss/Low Gate Charge • Available Screened To MIL-S-19500, TX, TXV And S Levels • Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO. OM60N10SC OM55N10SC OM55N10SA OM75N06SC OM75N06SA OM75N05SC OM75N05SA
VDS (V) 100 100 100 60 60 50 50
RDS(on) ( ) .025 .030 .035 .016 .018 .016 .018
SCHEMATIC
Drain
ID (A) 60 55 55 75 75 75 75
Package TO-258AA TO-258AA TO-254AA TO-258AA TO-254AA TO-258AA TO-254AA
PIN CONNECTION
TO-254AA
TO-258AA
3.1
Gate
Source
4 11 R1 Supersedes 2 07 R0
3.1 - 47
1
Pin 1: Pin 2: Pin 3:
23
Drain Source Gate
123
Pin 1: Drain Pin 2: Source Pin 3: Gate
OM55N10SA - OM75N06SC
3.1
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
60N10SC 55N10SA 75N06SA 55N10SC 75N06SC
VDS VDGR ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C PD @ TC = 100°C Junction-To-Case
Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current2 Continuous Drain Current2 Pulsed Drain Current1 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
100 100
60
100 100
60
60 55 75
37 33 45
180 180 225
130 125 125
55 50 50
1.00 1.00 1.00
75N05SA 75N05SC
50 50 75 45 225 125 50 1.00
Units
V V A A A W W W/°C
TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/16" from case for 10 secs.)
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%. 2 Package Limited: SA ID = 25A & SC ID = 35A @ 25°C
THERMAL RESISTANCE
RthJC Junction-to-Case
PACKAGE LIMITATIONS
1.0 °C/W
Parameters
TO254AA TO-258AA Unit
ID Continuous Drain Current Linear Derating Factor, Junction-to-Ambient
25 35 A .020 .025 W/°C
RthJA Thermal Resistance, Junction-to-Ambient (Free Air Operation)
50
40 °C/W
MECHANICAL OUTLINE
.165 .155
.695 .685
.270 .240
.045 .035
.144 DIA.
.545 .535
.050 .040
.707 .697
.835 .815
.550 .530
.685 .665
.800 .790
.550 .530
.750 .500
.200 TYP.
.065 .055 .140 TYP.
TO-258AA
.092 MAX. .005
.045 .035
PACKAGE OPTIONS
.550 .510
.150 TYP.
TO-254AA
.005
.260 .249
.150 TYP.
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information.
3.1 - 48
OM55N10SA - OM75N06SC
3.1
3.1 - 49
OM60N10SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics IAR Avalanche Current
Min.
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current (VGS = 0)
IGSS Gate-Body Leakage Current (VDS = 0)
Electrical Characteristics - ON*
VGS(th) RDS(on)
Gate Threshold Voltage Static Drain-Source On Resistance
ID(on) On State Drain Current Electrical Characteristics - Dynamic
gfs Forward Transconductance Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Electrical Characteristics - Switching On
Td(on) Turn-On Time tr Rise Time (di/dt)on Turn-On Current Slope
100
2 60 25
Qg Total Gate Charge Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time tf Fall Time tcross Cross-Over Time Electrical Characteristics - Source Drain Diode
ISD Source Drain Current ISDM* Source Drain Current (pulsed) VSD Forward On Voltage trr Reverse Recovery Time
Qrr Reverse Recovery Charge IRRM Reverse Recovery Current
Typ. Max. Units 60 A
720 mJ
100 mJ
37 A
V
250 µA 1000 µA ±100 nA
4 0.025 0.05
V A
4000 1100 250
S pF pF pF
90 nS 270 nS 270 A/µS
120 nC
200 nS 210 nS 410 nS
60 240 1.6 180
A A V nS
1.8 µC 10 A
Test Conditions (repetitive or non-repetitive,TJ = 25°C) (starting TJ = 25°C, ID = IAR, VDD = 25 V) (pulse width limited by Tj max, d < 1%) (repetitive or non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x R ,DS(on)max VGS = 10 V
VDS > ID(on) x R ,DS(on)max ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz
VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V VDD = 80 V, ID = 30 A, VGS = 10 V
VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V
ISD = 60 A, VGS = 0 ISD = 60 A, di/dt = 100 A/µs VR = 80 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM55N10SC (TC = 25°C unless otherw.