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OM75N06SC Dataheets PDF



Part Number OM75N06SC
Manufacturers Omnirel
Logo Omnirel
Description POWER MOSFETS
Datasheet OM75N06SC DatasheetOM75N06SC Datasheet (PDF)

OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • Isolated Hermetic Metal Packages • Ultra Low RDS(on) • Low Conductive Loss/Low Gate Charge • Available Screened To MIL-S-19500, TX, TXV And S Levels • Ceramic Feedthroughs available DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for lo.

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • Isolated Hermetic Metal Packages • Ultra Low RDS(on) • Low Conductive Loss/Low Gate Charge • Available Screened To MIL-S-19500, TX, TXV And S Levels • Ceramic Feedthroughs available DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate change simpler drive circuitry. MAXIMUM RATINGS (Per Device) PART NO. OM60N10SC OM55N10SC OM55N10SA OM75N06SC OM75N06SA OM75N05SC OM75N05SA VDS (V) 100 100 100 60 60 50 50 RDS(on) ( ) .025 .030 .035 .016 .018 .016 .018 SCHEMATIC Drain ID (A) 60 55 55 75 75 75 75 Package TO-258AA TO-258AA TO-254AA TO-258AA TO-254AA TO-258AA TO-254AA PIN CONNECTION TO-254AA TO-258AA 3.1 Gate Source 4 11 R1 Supersedes 2 07 R0 3.1 - 47 1 Pin 1: Pin 2: Pin 3: 23 Drain Source Gate 123 Pin 1: Drain Pin 2: Source Pin 3: Gate OM55N10SA - OM75N06SC 3.1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter 60N10SC 55N10SA 75N06SA 55N10SC 75N06SC VDS VDGR ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C PD @ TC = 100°C Junction-To-Case Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current2 Continuous Drain Current2 Pulsed Drain Current1 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor 100 100 60 100 100 60 60 55 75 37 33 45 180 180 225 130 125 125 55 50 50 1.00 1.00 1.00 75N05SA 75N05SC 50 50 75 45 225 125 50 1.00 Units V V A A A W W W/°C TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/16" from case for 10 secs.) -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C 300 300 300 300 °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%. 2 Package Limited: SA ID = 25A & SC ID = 35A @ 25°C THERMAL RESISTANCE RthJC Junction-to-Case PACKAGE LIMITATIONS 1.0 °C/W Parameters TO254AA TO-258AA Unit ID Continuous Drain Current Linear Derating Factor, Junction-to-Ambient 25 35 A .020 .025 W/°C RthJA Thermal Resistance, Junction-to-Ambient (Free Air Operation) 50 40 °C/W MECHANICAL OUTLINE .165 .155 .695 .685 .270 .240 .045 .035 .144 DIA. .545 .535 .050 .040 .707 .697 .835 .815 .550 .530 .685 .665 .800 .790 .550 .530 .750 .500 .200 TYP. .065 .055 .140 TYP. TO-258AA .092 MAX. .005 .045 .035 PACKAGE OPTIONS .550 .510 .150 TYP. TO-254AA .005 .260 .249 .150 TYP. MOD PAK Z-TAB 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information. 3.1 - 48 OM55N10SA - OM75N06SC 3.1 3.1 - 49 OM60N10SC (TC = 25°C unless otherwise specified) Avalanche Characteristics IAR Avalanche Current Min. EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-Body Leakage Current (VDS = 0) Electrical Characteristics - ON* VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On Resistance ID(on) On State Drain Current Electrical Characteristics - Dynamic gfs Forward Transconductance Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Electrical Characteristics - Switching On Td(on) Turn-On Time tr Rise Time (di/dt)on Turn-On Current Slope 100 2 60 25 Qg Total Gate Charge Electrical Characteristics - Switching Off Tr(Voff) Off Voltage Rise Time tf Fall Time tcross Cross-Over Time Electrical Characteristics - Source Drain Diode ISD Source Drain Current ISDM* Source Drain Current (pulsed) VSD Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Typ. Max. Units 60 A 720 mJ 100 mJ 37 A V 250 µA 1000 µA ±100 nA 4 0.025 0.05 V A 4000 1100 250 S pF pF pF 90 nS 270 nS 270 A/µS 120 nC 200 nS 210 nS 410 nS 60 240 1.6 180 A A V nS 1.8 µC 10 A Test Conditions (repetitive or non-repetitive,TJ = 25°C) (starting TJ = 25°C, ID = IAR, VDD = 25 V) (pulse width limited by Tj max, d < 1%) (repetitive or non-repetitive, TJ = 100°C) ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x R ,DS(on)max VGS = 10 V VDS > ID(on) x R ,DS(on)max ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V VDD = 80 V, ID = 30 A, VGS = 10 V VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V ISD = 60 A, VGS = 0 ISD = 60 A, di/dt = 100 A/µs VR = 80 V *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. OM55N10SC (TC = 25°C unless otherw.


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