CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • Hi...
CoolMOSTM Power
Transistor
Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ
IPB60R600CP
650 V 0.6 Ω 21 nC
PG-TO263
CoolMOS CP is designed for: Hard switching SMPS topologies
Type IPB60R600CP
Package PG-TO263
Marking 6R600P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse E AS E AR I AR dv /dt V GS
T C=25 °C T C=100 °C T C=25 °C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V
V DS=0...480 V static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Rev.2.0
page 1
Value 6.1 3.8 15 144 0.2 2.2 50 ±20 ±30 60
-55 ... 150
Unit A
mJ
A V/ns V
W °C
2008-02-15
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPB60R600CP
Value 3.3 15 15
Unit A
V/ns
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC
- - 2.1 K/W
Th...