K2530

Ordering number:ENN6406 Features · Low ON-resistance. · Ultrahigh-speed switching. · Low voltage drive. N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SK2530] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 2092B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP [2SK2530] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92500TS (KOTO) TA-2182 No.6406–1/4 2SK2530 Specifications Absolute Maximum ...