STW12NK90Z
STW12NK90Z
N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH™ Power MOSFET
Features
Order code STW12NK90Z...
Description
STW12NK90Z
N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH™ Power MOSFET
Features
Order code STW12NK90Z
VDSS 900 V
RDS(on) max
ID
Pw
< 0.88 Ω 11 A 230 W
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Very good manufacturing repeatability
Application
■ Switching applications
Description
This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
3 2 1 TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STW12NK90Z
W12NK90Z
Package TO-247
Packaging Tube
April 2011
Doc ID 9615 Rev 6
1/13
www.st.com
13
Contents
Contents
STW12NK90Z
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanica...
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