N-Channel QFET MOSFET
FQN1N60C — N-Channel QFET® MOSFET
FQN1N60C
N-Channel QFET® MOSFET
600 V, 0.30 A, 11.5 Ω
Description
This N-Channel enha...
Description
FQN1N60C — N-Channel QFET® MOSFET
FQN1N60C
N-Channel QFET® MOSFET
600 V, 0.30 A, 11.5 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
December 2013
Features
0.30 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.15 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 3.5 pF) 100% Avalanche Tested
D
GDS
TO-92
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD Power Dissipation (TA = 25°C) Power Dissipation (TL = 25°C) - Derate above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.
Thermal Characteristics
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Symbol RθJL RθJA
Parameter Thermal Resistance, Junction-to-Lead, Max. Thermal Resistance, Junction-to-Ambient, Max.
(Note 5a) (Note...
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