IRGP4062D-EPbF

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA G 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode E n-channel Tight parameter distribution Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V CC Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI E GC TO-220AB IRGB4062DPbF G Gate E GC E GC TO-247AC TO-247AD IRGP4062DPbF IRGP4062D-EPbF C Collector E Emitter Absolute Maximum Ratings Pa ra m e te r V CES IC @ TC = 25°C IC @ TC = 100°C ICM IL M IF @ TC = 25°C IF @ TC = 100°C IFM V GE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current eDiode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TST G Maximum Power Dissipation Maximum Power Dissipation Opera...