N-Channel Lateral DMOS FETs
SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT...
Description
SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT SUMMARY
Part Number
SD211DE-2 SD213DE-2 SD215DE-2
V(BR)DS Min (V)
30 10 20
VGS(th) Max (V)
1.5 1.5 1.5
rDS(on) Max (W)
45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V
Crss Max (pF)
0.5 0.5 0.5
tON Max (ns)
2 2 2
FEATURES
D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode
BENEFITS
D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation
APPLICATIONS
D Fast Analog Switch D Fast Sample-and-Holds D Pixel-Rate Switching D DAC Deglitchers D High-Speed Driver
DESCRIPTION
The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211DE-2 may be used for "5-V analog switching or as a high speed driver of the SD214DE-2. The SD214DE-2 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability.
The SD211DE/213DE/215DE are available only in the “–2” extended hi-rel flow. The Vishay Siliconix “–2” flow complies with the requirements of MIL-PRF-...
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