SD215DE-2

SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) PRODUCT SUMMARY Part Number SD211DE-2 SD213DE-2 SD215DE-2 V(BR)DS Min (V) 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 tON Max (ns) 2 2 2 FEATURES D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode BENEFITS D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation APPLICATIONS D Fast Analog Switch D Fast Sample-and-Holds D Pixel-Rate Switching D DAC Deglitchers D High-Speed Driver DESCRIPTION The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211DE-2 may be used for "5-V analog switching or as a high speed driver of the SD214DE-2. The SD214DE-2 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. The SD211DE/213DE/215DE are available only in the “–2” extended hi-rel flow. The Vishay Siliconix “–2” flow complies with the requirements of MIL-PRF-...